RJP5001APP Datasheet, Igbt, Renesas Technology

RJP5001APP Features

• Igbt
• VCES : 500 V
• TO-220FN package
• High Speed Switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1 1 : Gate 2 : Collector 3 : Em

PDF File Details

Part number:

RJP5001APP

Manufacturer:

Renesas ↗ Technology

File Size:

114.86kb

Download:

📄 Datasheet

Description:

Nch igbt.

RJP5001APP Application

• Applications Strobe flash Maximum Ratings (Tc = 25°C) www.DataSheet4U.com Parameter Symbol VCES VGES Ratings 500 ±17 Unit V V Conditions VGE =

TAGS

RJP5001APP

Renesas Technology

📁 Related Datasheet

RJP56F4 - IGBT (AG Electronica)
IGBT 430V/200A Número de parte: RJP56F4 Descripción: Transistor bipolar de puerta aislada (IGBT), es un dispositivo semiconductor que generalmente se .

RJP020N06 - Drive Nch MOS FET (Rohm)
.. RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT.

RJP020N06FRA - Power MOSFET (ROHM)
RJP020N06FRA 　　Nch 60V 2A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 240mΩ ±2A 2W lFeatures 1) Low on-resistance 2) Low voltage drive(2.5V dr.

RJP020N06T100 - N-Channel MOSFET (VBsemi)
RJP020N06T100 N-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.076 at VGS = 10 V 60 0.088 at VGS = 4.5 V ID (A)a.

RJP1CS03DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS03DWT - IGBT (Renesas)
Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS04DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS04DWT - IGBT (Renesas)
Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS05DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS05DWT/RJP1CS05DWA 1250V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS05DWT - IGBT (Renesas)
Preliminary Datasheet RJP1CS05DWT/RJP1CS05DWA 1250V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.