NESG2021M05 NPN SiGe RF Transistor

Renesas

NESG2021M05 Description

NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0034EJ0300 R.

NESG2021M05 Features

* This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP. , Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP. , Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
* Maximum stable power gain: MSG = 22.5 dB TYP. @

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Datasheet Details

Part number: NESG2021M05
Manufacturer: Renesas ↗
File Size: 234.96 KB
Datasheet: NESG2021M05-Renesas.pdf
Description: NPN SiGe RF Transistor

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NPN SiGe Transistor Renesas

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