NESG2021M05 - NPN SiGe RF Transistor

Name: NESG2021M05
SKU: NESG2021M05-1567936

Renesas

The NESG2021M05 by Renesas is a NPN SiGe RF Transistor. Below is the official datasheet preview.

Datasheet Details

Part number	NESG2021M05
Manufacturer	Renesas
File Size	234.96 KB
Description	NPN SiGe RF Transistor
Datasheet	NESG2021M05-Renesas.pdf
Additional preview pages of the NESG2021M05 datasheet.

This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP. , Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP. , Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz.
Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz.
High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V.
Flat-lead 4-pin thin-type super minimold (M05) pac.

📁 NESG2021M05 Similar Datasheet

NESG2021M16 - HIGH FREQUENCY TRANSISTOR (CEL)
NESG2030M04 - NONLINEAR MODEL (NEC)
NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2031M16 - HIGH FREQUENCY TRANSISTOR (CEL)
NESG204619 - NPN SiGe TRANSISTOR (CEL)
NESG2046M33 - NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION (NEC)
NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR (NEC)
NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)

Other Datasheets by Renesas

Published: Feb 9, 2025 |