Datasheet Specifications
- Part number
- NESG2021M05
- Manufacturer
- Renesas ↗
- File Size
- 234.96 KB
- Datasheet
- NESG2021M05-Renesas.pdf
- Description
- NPN SiGe RF Transistor
Description
NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0034EJ0300 R.
Features
* This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP. , Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP. , Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHzNESG2021M05 Distributors
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