NESG2021M05 Datasheet - Renesas

NESG2021M05 NPN SiGe RF Transistor

NESG2021M05 Features

* This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz

* Maximum stable power gain: MSG = 22.5 dB TYP. @

NESG2021M05 Datasheet (234.96 KB)

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Datasheet Details

Part number:

NESG2021M05

Manufacturer:

Renesas ↗

File Size:

234.96 KB

Description:

Npn sige rf transistor.

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