NESG2021M05 Datasheet, Transistor, Renesas

NESG2021M05 Features

• Transistor
• This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TY

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Part number:

NESG2021M05

Manufacturer:

Renesas ↗

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234.96kb

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📄 Datasheet

Description:

Npn sige rf transistor.

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NESG2021M05

Renesas

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