RJP1CS08DWA Datasheet, Igbt, Renesas

RJP1CS08DWA Features

• Igbt
• Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
• High speed switching
• Short circuit withstands time

PDF File Details

Part number:

RJP1CS08DWA

Manufacturer:

Renesas ↗

File Size:

129.52kb

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJP1CS08DWA Application

• Applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipmen

TAGS

RJP1CS08DWA

Renesas

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