RJP1CS08DWA

IGBT

Renesas

RJP1CS08DWA Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)

* High speed switching

* Short circuit withstands time (10 s min.) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E

RJP1CS08DWA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP1CS08DWA Datasheet (129.52 KB)