RJP1CS08DWA Datasheet - Renesas

RJP1CS08DWA IGBT

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RJP1CS08DWA Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)

* High speed switching

* Short circuit withstands time (10 s min.) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E

RJP1CS08DWA Datasheet (129.52 KB)