RJP1CS08DWT Datasheet, Igbt, Renesas

✔ RJP1CS08DWT Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
High speed switching
Short circuit withstands time (10 s m

✔ RJP1CS08DWT Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard":

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RJP1CS08DWT

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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📁 Related Datasheet

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RJP1CS08DWT IGBT Renesas