RJP65S08DWA Datasheet - Renesas

RJP65S08DWA IGBT

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RJP65S08DWA Features

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)

* High speed Switching

* Short circuit withstands time (10 s min.) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 2 3 1G 1 3 1.

RJP65S08DWA Datasheet (128.87 KB)