RJP65S08DWA, RJP65S08DWT IGBT

Renesas

RJP65S08DWA Description

Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP65S08DWA Features

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
* High speed Switching
* Short circuit withstands time (10 s min. ) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 2 3 1G 1 3 1.

RJP65S08DWA Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

📥 Download Datasheet

RJP65S08DWA Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP65S08DWA, RJP65S08DWT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: RJP65S08DWA, RJP65S08DWT
Manufacturer: Renesas ↗
File Size: 128.87 KB
Datasheet: RJP65S08DWT_Renesas.pdf
Description: IGBT
Note: This datasheet PDF includes multiple part numbers: RJP65S08DWA, RJP65S08DWT.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

RJP6085DPK - Silicon N-Channel IGBT (Renesas Technology)
RJP6085DPN - Silicon N-Channel IGBT (Renesas Technology)
RJP60D0DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJP020N06 - Drive Nch MOS FET (Rohm)
RJP020N06FRA - Power MOSFET (ROHM)
RJP020N06T100 - N-Channel MOSFET (VBsemi)
RJP2557DPK - IGBT (Renesas Technology)
RJP3053DPP - IGBT (Renesas Technology)

📌 All Tags

IGBT Renesas

Renesas RJP65S08DWA-like datasheet