RJP65S08DWT Datasheet, Igbt, Renesas

Igbt

RJP65S08DWT

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Igbt.
of circuits, software and other related information in this document are provided only to illustrate the operation of s.

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
High speed Switching
Short circuit withstands time (10 s m

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard":

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RJP65S08DWT IGBT Renesas