H5N2507P - High Speed Power Switching MOSFET

Renesas Technology

H5N2507P Datasheet Preview — Preview of H5N2507P PDF

Datasheet Details

Part number	H5N2507P
Manufacturer	Renesas ↗ Technology
File Size	120.73 KB
Description	High Speed Power Switching MOSFET
Datasheet	H5N2507P-RenesasTechnology.pdf

H5N2507P Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C).
Low leakage current.
High speed switching.
Low gate charge.
Built-in fast recovery diode Outline.

📁 H5N2507P Similar Datasheet

H5N2509P - Silicon N-Channel MOSFET (Hitachi)
H5N2005DL - MOSFET (Renesas)
H5N2005DS - MOSFET (Renesas)
H5N2901FL-M0 - MOSFET (Renesas)
H5N3011P - N-Channel MOSFET (INCHANGE)
H5N5001FM - Silicon N-Channel MOSFET (Hitachi)
H5N5004PL - Silicon N-Channel MOSFET (Hitachi)
H5N5005PL - Silicon N-Channel MOSFET (Hitachi)

Other Datasheets by Renesas Technology

H5N2501LD - Silicon N Channel MOS FET High Speed Power Switching
H5N2501LM - Silicon N Channel MOS FET High Speed Power Switching
H5N2501LS - Silicon N Channel MOS FET High Speed Power Switching
H5N2502CF - Silicon N Channel MOS FET High Speed Power Switching
H5N2503P - Silicon N Channel MOS FET High Speed Power Switching
H5N2504DL - Silicon N Channel MOS FET High Speed Power Switching

Published: Oct 20, 2015 |