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HAT1108C - Silicon P-Channel Power MOSFET

HAT1108C Description

HAT1108C Silicon P Channel MOS FET Power Switching REJ03G1234-0500 Rev.5.00 Aug 30, 2006 .

HAT1108C Features

* Low on-resistance RDS(on) = 155 mΩ typ. (at VGS =
* 10 V) www. DataSheet4U. com
* Low drive current.
* 4.5 V gate drive devices.
* High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. So

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Silicon P-Channel Power MOSFET Renesas Technology
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