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HAT1111C - Silicon P-Channel Power MOSFET

HAT1111C Description

HAT1111C Silicon P Channel MOS FET Power Switching REJ03G0446-0600 Rev.6.00 May 19.2005 .

HAT1111C Features

* Low on-resistance RDS(on) = 245 mΩ typ. (at VGS =
* 10 V) www. DataSheet4U. com
* Low drive current.
* 4.5 V gate drive devices.
* High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2 3 4 5 DDD

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Silicon P-Channel Power MOSFET Renesas Technology
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