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HAT1139H - Silicon P-Channel Power MOSFET

HAT1139H Description

HAT1139H Silicon P Channel Power MOS FET Power Switching .

HAT1139H Features

* Capable of
* 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS =
* 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 5 D D 1 234 2 3 G G S S 1 4 REJ03

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Silicon P-Channel Power MOSFET Renesas Technology
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