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HAT2217C Silicon N-Channel Power MOSFET

HAT2217C Description

www.DataSheet4U.com HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005 .

HAT2217C Features

* Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V)
* Low drive current.
* High density mounting
* 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 DDD D Index band 4 5 6 2 3 6 G 1 1. Source 2. Drain 3. Dr

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Silicon N-Channel Power MOSFET Renesas Technology
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