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RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching

RJK6002DPD Description

www.DataSheet4U.com RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 .

RJK6002DPD Features

* Low on-resistance
* Low leakage current
* High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage

RJK6002DPD Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
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