Part number:
2SD1383K
Manufacturer:
File Size:
1.34 MB
Description:
High-gain amplifier transistor.
* 1)Darlington connection for high DC current gain. 2)Built-in 4kΩ resistor between base and emitter. 3)Complements the 2SB852K. lOutline SOT-346 SC-59 SMT3 lInner circuit Datasheet lApplication HIGH GAIN AMPLIFIER lPackaging specifications Part No. Package
2SD1383K
1.34 MB
High-gain amplifier transistor.
📁 Related Datasheet
2SD1380 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current -IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 32V(Min) ·Good Lineari.
2SD1380 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1380
·
..
DESCRIPTION ·With TO-126 package ·Comple.
2SD1381F - Power Transistor
(Rohm)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Features .
2SD1382 - Epitaxial Planar NPN Silicon Transistor
(ETC)
..
..
..
.
2SD1382 - NPN Transistor
(ROHM Electronics)
..
.
2SD1384 - Epitaxial Planar NPN Silicon Transistor
(Rohm)
.
2SD1385 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1385
Silicon NPN triple diffusion planer type
For low-frequency output amplification
Unit: mm
6.9±0.1 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.
2SD1386 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1386
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) .