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2SD1386 Datasheet - INCHANGE

2SD1386 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= 4A *Low Saturation Voltage *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power ampl.

2SD1386 Datasheet (196.64 KB)

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Datasheet Details

Part number:

2SD1386

Manufacturer:

INCHANGE

File Size:

196.64 KB

Description:

Npn transistor.

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