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2SD1386

NPN Transistor

2SD1386 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min)
*High DC Current Gain : hFE= 2000(Min) @IC= 4A
*Low Saturation Voltage
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for power ampl.

2SD1386 Datasheet (196.64 KB)

Preview of 2SD1386 PDF

Datasheet Details

Part number:

2SD1386

Manufacturer:

INCHANGE

File Size:

196.64 KB

Description:

Npn transistor.

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2SD1386 NPN Transistor INCHANGE

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