2SD1386 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1386 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 4A. Low Saturation Voltage. 10.

📥 Download Datasheet

2SD1386 Datasheet Preview — Preview of 2SD1386 PDF

Datasheet Specifications

Part number: 2SD1386
Manufacturer: INCHANGE
File Size: 196.64 KB
Datasheet: 2SD1386-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Cur

2SD1386 Distributors

📁 Related Datasheet

2SD1381F 2SD1382 2SD1383K 2SD1384 2SD1385 2SD1302

📌 All Tags

2SD1386 NPN Transistor INCHANGE

INCHANGE 2SD1386-like datasheet