2SD1386
INCHANGE
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Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= 4A *Low Saturation Voltage *1
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2SD1380 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current -IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 32V(Min) ·Good Lineari.
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·
..
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Features .
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..
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2SD1382 - NPN Transistor
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Parameter
VCES IC R
Value
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lFeatures
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(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD130
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(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
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DESCRIPTION ·High Collector-Base Breakdown Voltage-
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