* q q q q q 1.5 0.4 1.5 R0.9 R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the
2SD1385
Panasonic Semiconductor
37.43 KB
Silicon npn transistor.
Transistor
2SD1385
Silicon NPN triple diffusion planer type
For low-frequency output amplification
Unit: mm
6.9±0.1 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.
📁 Related Datasheet
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(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current -IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 32V(Min) ·Good Lineari.
2SD1380 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1380
·
..
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(Rohm)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
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Features .
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(ETC)
..
..
..
.
2SD1382 - NPN Transistor
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2SD1383K - High-gain Amplifier Transistor
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2SD1383K
High-gain Amplifer Transistor (32V, 0.3A)
Parameter
VCES IC R
Value
32V 0.3A 4kΩ
lFeatures
1)Darlington connection for high DC current gai.
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(INCHANGE)
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isc Silicon NPN Darlington Power Transistor
2SD1386
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) .
