2SD1380 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD1380

Manufacturer:

INCHANGE

File Size:

207.84kb

Download:

📄 Datasheet

Description:

Npn transistor.

High Collector Current -IC= 2A

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min)

Good Linearity of

2SD1380 Application

• Applications
• Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

TAGS

2SD1380

INCHANGE

📁 Related Datasheet

2SD1380 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1380 · .. DESCRIPTION ·With TO-126 package ·Comple.

2SD1381F - Power Transistor (Rohm)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Features .

2SD1382 - Epitaxial Planar NPN Silicon Transistor (ETC)
.. .. .. .

2SD1382 - NPN Transistor (ROHM Electronics)
.. .

2SD1383K - High-gain Amplifier Transistor (Rohm)
2SD1383K High-gain Amplifer Transistor (32V, 0.3A) Parameter VCES IC R Value 32V 0.3A 4kΩ lFeatures 1)Darlington connection for high DC current gai.

2SD1384 - Epitaxial Planar NPN Silicon Transistor (Rohm)
.

2SD1385 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.

2SD1386 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1386 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) .

2SD130 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Volt.

2SD1300 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Co.