2SD1380 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector Current -IC= 2A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 32V(Min). Good Linearity of hFE. Low Saturation Volt.

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Datasheet Specifications

Part number: 2SD1380
Manufacturer: INCHANGE
File Size: 207.84 KB
Datasheet: 2SD1380-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipa

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2SD1380 NPN Transistor INCHANGE

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