RU1HE12L Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU1HE12L, N-Channel Advanced Power MOSFET

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S

RU1HE12L Features

* 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Conver