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RU1HE12L

N-Channel Advanced Power MOSFET

RU1HE12L Features

* 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Conver

RU1HE12L General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU1HE12L Datasheet (282.96 KB)

Preview of RU1HE12L PDF

Datasheet Details

Part number:

RU1HE12L

Manufacturer:

Ruichips

File Size:

282.96 KB

Description:

N-channel advanced power mosfet.

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TAGS

RU1HE12L N-Channel Advanced Power MOSFET Ruichips

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