RU1HE12L Datasheet - Ruichips

RU1HE12L N-Channel Advanced Power MOSFET

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU1HE12L Features

* 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Conver

RU1HE12L Datasheet (282.96 KB)

RU1HE12L Datasheet Preview — Preview of RU1HE12L PDF

Datasheet Details

Part number:

RU1HE12L

Manufacturer:

Ruichips

File Size:

282.96 KB

Description:

N-channel advanced power mosfet.

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RU1HE12L N-Channel Advanced Power MOSFET Ruichips

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