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RU1HE3D

N-Channel Advanced Power MOSFET

RU1HE3D Features

* 100V/3A, RDS (ON) =130mΩ (Typ.) @ VGS=10V RDS (ON) =140mΩ (Typ.) @ VGS=4.5V

* ESD Protected

* Reliable and Rugged

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Available Pin Description SOT-223 Applications

* Power

RU1HE3D General Description

SOT-223 Applications

* Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuo.

RU1HE3D Datasheet (249.81 KB)

Preview of RU1HE3D PDF

Datasheet Details

Part number:

RU1HE3D

Manufacturer:

Ruichips

File Size:

249.81 KB

Description:

N-channel advanced power mosfet.

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RU1HE3D N-Channel Advanced Power MOSFET Ruichips

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