RU1HE3D N-Channel Advanced Power MOSFET

Ruichips

Description

RU1HE3D N-Channel Advanced Power MOSFET MOSFET .
SOT-223 Applications. Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherw.

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Datasheet Specifications

Part number: RU1HE3D
Manufacturer: Ruichips
File Size: 249.81 KB
Datasheet: RU1HE3D-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

Features

* 100V/3A, RDS (ON) =130mΩ (Typ. ) @ VGS=10V RDS (ON) =140mΩ (Typ. ) @ VGS=4.5V
* ESD Protected
* Reliable and Rugged
* Ultra Low On-Resistance
* 100% avalanche tested

Applications

* Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC

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RU1HE3D N-Channel Advanced Power MOSFET Ruichips

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