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RU1HE16L

N-Channel Advanced Power MOSFET

RU1HE16L Features

* 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO252 Applications

* Power Management

RU1HE16L General Description

TO252 Applications

* Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuou.

RU1HE16L Datasheet (289.88 KB)

Preview of RU1HE16L PDF

Datasheet Details

Part number:

RU1HE16L

Manufacturer:

Ruichips

File Size:

289.88 KB

Description:

N-channel advanced power mosfet.

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TAGS

RU1HE16L N-Channel Advanced Power MOSFET Ruichips

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