RU1HE4H N-Channel Advanced Power MOSFET

Ruichips

RU1HE4H Description

RU1HE4H N-Channel Advanced Power MOSFET MOSFET .
SOP-8 Applications. Power Management. Converters.

RU1HE4H Features

* 100V/4A, RDS (ON) =72mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V
* Super High Dense Cell Design
* Reliable and Rugged
* ESD Protected

RU1HE4H Applications

* Power Management
* Converters. Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuo

📥 Download Datasheet

RU1HE4H Datasheet Preview — Preview of RU1HE4H PDF

Datasheet Details

Part number: RU1HE4H
Manufacturer: Ruichips
File Size: 273.79 KB
Datasheet: RU1HE4H-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

📁 Related Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips

Ruichips RU1HE4H-like datasheet

RU1HE4D - N-Channel Advanced Power MOSFET
RU1HE12L - N-Channel Advanced Power MOSFET
RU1HE16L - N-Channel Advanced Power MOSFET
RU1HE3D - N-Channel Advanced Power MOSFET
RU1HE3H - N-Channel Advanced Power MOSFET
RU1H100 - N-Channel Advanced Power MOSFET