RU1HP35L - P-Channel Advanced Power MOSFET

Ruichips

The RU1HP35L by Ruichips is a P-Channel Advanced Power MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

RU1HP35L P-Channel Advanced Power MOSFET by Ruichips - Datasheet Preview — Official preview page of the **RU1HP35L** P-Channel Advanced Power MOSFET datasheet (Ruichips).

Datasheet Details

Part number	RU1HP35L
Manufacturer	Ruichips
File Size	384.79 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU1HP35L-Ruichips.pdf
Additional preview pages of the RU1HP35L datasheet.

RU1HP35L Product details

Description

D Applications Load switch G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistanc

Features

-100V/-35A, RDS (ON) =30mΩ(Typ. )@VGS=-10V.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

📁 RU1HP35L Similar Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

Other Datasheets by Ruichips

RU1HP55R - P-Channel Advanced Power MOSFET
RU1HP60Q - P-Channel Advanced Power MOSFET
RU1HP60R - P-Channel Advanced Power MOSFET
RU1H100 - N-Channel Advanced Power MOSFET
RU1H100R - N-Channel Advanced Power MOSFET
RU1H130Q - N-Channel Advanced Power MOSFET

Published: Apr 10, 2017 |