RU1HP55R Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU1HP55R, P-Channel Advanced Power MOSFET

G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

RU1HP55R Features

* -100V/-55A, RDS (ON) =40mΩ(Typ.)@VGS=-10V

* Low On-Resistance

* Super High Dense Cell Design

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compli