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RU1HP55R

P-Channel Advanced Power MOSFET

RU1HP55R Features

* -100V/-55A, RDS (ON) =40mΩ(Typ.)@VGS=-10V

* Low On-Resistance

* Super High Dense Cell Design

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compli

RU1HP55R General Description

G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300.

RU1HP55R Datasheet (443.62 KB)

Preview of RU1HP55R PDF

Datasheet Details

Part number:

RU1HP55R

Manufacturer:

Ruichips

File Size:

443.62 KB

Description:

P-channel advanced power mosfet.

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TAGS

RU1HP55R P-Channel Advanced Power MOSFET Ruichips

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