RU1HP55R - P-Channel Advanced Power MOSFET

Ruichips

The RU1HP55R by Ruichips is a P-Channel Advanced Power MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

RU1HP55R P-Channel Advanced Power MOSFET by Ruichips - Datasheet Preview — Official preview page of the **RU1HP55R** P-Channel Advanced Power MOSFET datasheet (Ruichips).

Datasheet Details

Part number	RU1HP55R
Manufacturer	Ruichips
File Size	443.62 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU1HP55R-Ruichips.pdf
Additional preview pages of the RU1HP55R datasheet.

RU1HP55R Product details

Description

G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source

Features

-100V/-55A, RDS (ON) =40mΩ(Typ. )@VGS=-10V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

📁 RU1HP55R Similar Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

Other Datasheets by Ruichips

RU1HP35L - P-Channel Advanced Power MOSFET
RU1HP60Q - P-Channel Advanced Power MOSFET
RU1HP60R - P-Channel Advanced Power MOSFET
RU1H100 - N-Channel Advanced Power MOSFET
RU1H100R - N-Channel Advanced Power MOSFET
RU1H130Q - N-Channel Advanced Power MOSFET

Published: Apr 25, 2016 |