RU30160R
Ruichips
298.67kb
N-channel advanced power mosfet. TO-220 Applications
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RU30160S - N-Channel Advanced Power MOSFET
(Ruichips)
RU30160S
N-Channel Advanced Power MOSFET
Features
• 30V/160A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design • Ultra Low On-Resistance .
RU30100L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/100A, RDS (ON) =2.2 mΩ(Typ.)@VGS=10V RDS (ON) =4 mΩ(Typ.)@VGS=4.5V
• Super High Dense .
RU30100R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30100R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Super High Dense Ce.
RU30105L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30105L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU30105R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30105R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/125A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Res.
RU30106L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30106L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/130A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V
• Super High Dense Ce.
RU3010H - N-Channel Advanced Power MOSFET
(Ruichips)
RU3010H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/8A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V
• Super High Dense.
RU30120L - N-Channel Advanced Power MOSFET
(Ruichips)
RU30120L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V
• Super High .
RU30120M - N-Channel Advanced Power MOSFET
(Ruichips)
RU30120M
N-Channel Advanced Power MOSFET
Features
• 30V/120A, RDS (ON) =2mΩ(Typ.)@VGS=10V RDS (ON) =2.9mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Desi.
RU30120R - N-Channel Advanced Power MOSFET
(Ruichips)
RU30120R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V
• Super High .