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RU30160S N-Channel Advanced Power MOSFET

RU30160S Description

RU30160S N-Channel Advanced Power MOSFET .
D Applications. DC-DC Converters G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted.

RU30160S Features

* 30V/160A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested

RU30160S Applications

* DC-DC Converters G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mount

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Datasheet Details

Part number
RU30160S
Manufacturer
Ruichips
File Size
308.05 KB
Datasheet
RU30160S-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips
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