RU30E4B

N-Channel Advanced Power MOSFET

Ruichips

RU30E4B Features

* 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected(Rating 2KV HBM)

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Load Switch Pin Descripti

RU30E4B General Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I.

RU30E4B Datasheet (308.56 KB)

RU30E4B Datasheet Preview — Preview of RU30E4B PDF

Datasheet Details

Part number:

RU30E4B

Manufacturer:

Ruichips

File Size:

308.56 KB

Description:

N-channel advanced power mosfet.

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RU30E4B N-Channel Advanced Power MOSFET Ruichips

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RU30E4B Features

RU30E4B General Description

Datasheet Details

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Description:

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