RU30E4B Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU30E4B, N-Channel Advanced Power MOSFET

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

RU30E4B Features

* 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected(Rating 2KV HBM)

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Load Switch Pin Descripti