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RU30E4B N-Channel Advanced Power MOSFET

RU30E4B Description

RU30E4B N-Channel Advanced Power MOSFET .
D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

RU30E4B Features

* 30V/4A, RDS (ON) =30mΩ(Typ. )@VGS=10V RDS (ON) =55mΩ(Typ. )@VGS=4.5V
* Super High Dense Cell Design
* ESD protected(Rating 2KV HBM)
* Reliable and Rugged

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Datasheet Details

Part number
RU30E4B
Manufacturer
Ruichips
File Size
308.56 KB
Datasheet
RU30E4B-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips
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