SW4N60B

N-channel I-PAK/D-PAK/TO-220F MOSFET

SEMIPOWER

SW4N60B Features

* High ruggedness

* RDS(ON) (Max 2.5 Ω)@VGS=10V

* Gate Charge (Typ 11nC)

* Improved dv/dt Capability

* 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology o

SW4N60B General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW4N60B Datasheet (932.96 KB)

SW4N60B Datasheet Preview — Preview of SW4N60B PDF

Datasheet Details

Part number:

SW4N60B

Manufacturer:

SEMIPOWER

File Size:

932.96 KB

Description:

N-channel i-pak/d-pak/to-220f mosfet.

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TAGS

SW4N60B N-channel I-PAK D-PAK TO-220F MOSFET SEMIPOWER

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SW4N60B Features

SW4N60B General Description

Datasheet Details

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Description:

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