SW4N70L Datasheet (Samwin) - N-channel MOSFET

SW4N70L, N-channel MOSFET

Gate 2.

Drain 3.

Source This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristic

SW4N70L Features

* High ruggedness

* Low RDS(ON) (Typ 0.8Ω)@VGS=10V

* Low Gate Charge (Typ 18nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application: LED,Charge, Adaptor TO-220F TO-251N TO-252 1 23 1 23 1 23 BVDSS : 700V ID : 4A RDS(ON) : 0.8Ω 2 1 General Descriptio