SW4N60 - N-Channel MOSFET

Samwin

Datasheet Details

N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W SW4N60 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and high efficiency switch mod.

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Published: Mar 5, 2012 |