SW4N60A
Samwin
887.22kb
N-channel mosfet. This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteri
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SW4N60 - N-Channel MOSFET
(Samwin)
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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg .
SW4N60B - N-channel I-PAK/D-PAK/TO-220F MOSFET
(SEMIPOWER)
SAMWIN
TO-251 TO-252 TO-220F
SW4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET
BVDSS : 600V ID
1
Features
■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V.
SW4N60D - MOSFET
(SEMIPOWER)
SAMWIN
SW4N60D
N-channel TO-220F/I-PAKN/D-PAK MOSFET
Features
TO-220F TO-251N TO-252
■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge.
SW4N60K - N-Channel MOSFET
(SEMIPOWER)
SW4N60K
N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Features
High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge (Typ 13nC) .
SW4N60V - N-Channel MOSFET
(Samwin)
.DataSheet.co.kr
SAMWIN
SW4N60V
N-channel MOSFET
BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm
1 2 2
Features
■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@.
SW4N65 - N-Channel MOSFET
(Samwin)
.DataSheet.co.kr
SAMWIN
TO-220F TO-220
SW4N65
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 18nC).
SW4N70L - N-channel MOSFET
(Samwin)
SW4N70L
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Features
High ruggedness Low RDS(ON) (Typ 0.8Ω)@VGS=10V Low Gate Charge (Typ 18n.
SW4N80B - N-channel TO-220F MOSFET
(Samwin)
SAMWIN
SW4N80B
N-channel TO-220F MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capabil.
SW401 - 4-SPST Switches
(BOWEI)
.DataSheet.co.kr
B O WEI
BOWEI INTEGRATED CIRCUITS CO.,LTD.
SW40x/SWB40x
4-SPST Switches
Features
●Compact ●Low
metal package insertion Loss.Hi.
SW401B - 4-SPST Switches
(BOWEI)
.DataSheet.co.kr
B O WEI
BOWEI INTEGRATED CIRCUITS CO.,LTD.
SW40x/SWB40x
4-SPST Switches
Features
●Compact ●Low
metal package insertion Loss.Hi.
