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SW4N80B

N-channel TO-220F MOSFET

SW4N80B Features

* High ruggedness

* RDS(ON) (Max 4Ω)@VGS=10V

* Gate Charge (Typical 14nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-220F TO-251N 1 2 3 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. T

SW4N80B General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW4N80B Datasheet (488.53 KB)

Preview of SW4N80B PDF

Datasheet Details

Part number:

SW4N80B

Manufacturer:

Samwin

File Size:

488.53 KB

Description:

N-channel to-220f mosfet.

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TAGS

SW4N80B N-channel TO-220F MOSFET Samwin

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