SW4N60K Datasheet (SEMIPOWER)

SW4N60K, N-Channel MOSFET

3 This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

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SW4N60K Features

* High ruggedness

* Low RDS(ON) (Typ 1Ω)@VGS=10V

* Low Gate Charge (Typ 13nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application:Adapter,LED, Charger TO-220F TO-251 TO-252 1 2 3 12 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 4A RDS(ON) : 1Ω