SW4N60V

N-Channel MOSFET

Samwin

SW4N60V Features

* High ruggedness

* RDS(ON) (Max 2.5 Ω)@VGS=10V

* Gate Charge (Typ 25nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-251 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enabl

SW4N60V General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW4N60V Datasheet (1.01 MB)

SW4N60V Datasheet Preview — Preview of SW4N60V PDF

Datasheet Details

Part number:

SW4N60V

Manufacturer:

Samwin

File Size:

1.01 MB

Description:

N-channel mosfet.

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TAGS

SW4N60V N-Channel MOSFET Samwin

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SW4N60V Features

SW4N60V General Description

Datasheet Details

File Size:

Description:

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