STI4N62K3 Datasheet - ST Microelectronics

STI4N62K3 SuperMESH3 Power MOSFET

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and hig.

STI4N62K3 Features

* Type STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3

* VDSS RDS(on) max ID Pw 70 W 25 W 70 W 70 W 1 3 1 2 3 620 V < 1.95 Ω D²PAK 3.8 A TO-220FP 100% avalanche tested 3 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved

STI4N62K3_STMicroelectronics.pdf