STI410N4F7AG Datasheet, Mosfet, STMicroelectronics

STI410N4F7AG Features

• Mosfet TAB Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1) Order code STI410N4F7AG VDS 40 V RDS(on) max. 1.8 mΩ ID 180 A PTOT 365 W
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STI410N4F7AG

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STMicroelectronics ↗

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📄 Datasheet

Description:

N-channel power mosfet. This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate

STI410N4F7AG Application

• Applications
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immuni

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STI410N4F7AG

STMicroelectronics

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