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STI410N4F7AG N-channel Power MOSFET

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Description

STI410N4F7AG Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package Datasheet - preliminary data .
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* TAB Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1) Order code STI410N4F7AG VDS 40 V RDS(on) max. 1.8 mΩ ID 180 A PTOT 365 W

Applications

* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications

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