STI47N60DM6AG Datasheet - STMicroelectronics

STI47N60DM6AG N-channel Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be.

STI47N60DM6AG Features

* Order code STI47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A

* AEC-Q101 qualified

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely hi

STI47N60DM6AG-STMicroelectronics.pdf