STP10NM60N Datasheet, Mosfet, ST Microelectronics

STP10NM60N Features

• Mosfet TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP10NM60N 600 V 550 mΩ 10 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gat

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STP10NM60N

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STMicroelectronics ↗

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📄 Datasheet

Description:

N-channel power mosfet. AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutio

STP10NM60N Application

• Applications
• Switching applications G(1) S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET developed using the

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STP10NM60N

ST Microelectronics

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