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STP10NM60N

N-Channel Power MOSFET

STP10NM60N Features

* TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP10NM60N 600 V 550 mΩ 10 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance D(2, TAB) Applications

* Switching applications G(1) S(3) Description AM01475v1_noZ

STP10NM60N General Description

AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suita.

STP10NM60N Datasheet (509.90 KB)

Preview of STP10NM60N PDF

Datasheet Details

Part number:

STP10NM60N

Manufacturer:

STMicroelectronics ↗

File Size:

509.90 KB

Description:

N-channel power mosfet.

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STP10NM60N N-Channel Power MOSFET ST Microelectronics

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