STP10N62K3 Datasheet - STMicroelectronics

STP10N62K3 - N-channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitab.

STP10N62K3 Features

* Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacitances

* Improved diode

STP10N62K3-STMicroelectronics.pdf