Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona
STP16NB25_STMicroelectronics.pdf
Datasheet Details
STP16NB25FP, STP16NB25
105.30 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: STP16NB25FP, STP16NB25.
Please refer to the document for exact specifications by model.
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