STP16N65M2

N-channel Power MOSFET

STMicroelectronics

STP16N65M2 Features

* TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP16N65M2 650 V 360 mΩ 11 A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected Applications

* Switching applications G

STP16N65M2 General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high effic.

STP16N65M2 Datasheet (763.04 KB)