STP16N50M2 Datasheet - STMicroelectronics

STP16N50M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter.

STP16N50M2 Features

* Order code STD16N50M2 STF16N50M2 STP16N50M2 VDS at TJ max. RDS(on) max. 550 V 0.28 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected ID 13 A Packages DPAK TO-220FP TO-220 Applications

STP16N50M2-STMicroelectronics.pdf