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STP160N4LF6 Datasheet - STMicroelectronics

STP160N4LF6 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STP160N4LF6 Table 1. Device summary Marking Package 160N.

STP160N4LF6 Features

* Order code VDS RDS(on) max ID PTOT STP160N4LF6 40 V 0.0029 Ω 120 A 150 W

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* Logic level drive

* High avalanche ruggedness

* 100% avalanche tested Figure 1. Internal schematic diagram '

STP160N4LF6 Datasheet (791.47 KB)