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STP18NM60N Datasheet - ST Microelectronics

STP18NM60N Power MOSFET

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficienc.

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STP18NM60N STP18NM60N Power MOSFET ST Microelectronics

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