STP18N55M5

N-channel Power MOSFET

STMicroelectronics

STP18N55M5 Features

* TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP18N55M5 600 V 192 mΩ 16 A

* Extremely low RDS(on)

* Low gate charge and input capacitance

* Excellent switching performance

* 100% avalanche tested Applications

* Switchi

STP18N55M5 General Description

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative S(3) vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly AM01475v1_noZen suitable for applications requir.

STP18N55M5 Datasheet (633.52 KB)