STP18N65M2

N-channel Power MOSFET

STMicroelectronics

STP18N65M2 Features

* TAB TAB 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STI18N65M2 STP18N65M2 VDS 650V RDS(on) max ID 0.33Ω 12 A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-

STP18N65M2 General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Or.

STP18N65M2 Datasheet (491.19 KB)