STP180N10F3

N-CHANNEL POWER MOSFET

STMicroelectronics

STP180N10F3 Features

* Order codes VDSS STP180N10F3 100 V

* Ultra low on-resistance

* 100% avalanche tested RDS(on) max. 5.1 mΩ ID 120 A Applications

* High current switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™

STP180N10F3 General Description

This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" .

STP180N10F3 Datasheet (693.90 KB)