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STP18NM60ND

N-Channel MOSFET

STP18NM60ND Features

* Drain Current

* ID= 13A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Low Drain-Source

STP18NM60ND General Description


*Low Drain-Source On-Resistance APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃.

STP18NM60ND Datasheet (271.40 KB)

Preview of STP18NM60ND PDF

Datasheet Details

Part number:

STP18NM60ND

Manufacturer:

INCHANGE

File Size:

271.40 KB

Description:

N-channel mosfet.

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STP18NM60ND N-Channel MOSFET INCHANGE

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