STP18NM60ND N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VG.

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Datasheet Specifications

Part number: STP18NM60ND
Manufacturer: INCHANGE
File Size: 271.40 KB
Datasheet: STP18NM60ND-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 13A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Tempe

STP18NM60ND Distributors

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STP18NM60ND N-Channel MOSFET INCHANGE

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