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STP10NM60N N-Channel MOSFET

STP10NM60N Description

Isc N-Channel MOSFET Transistor STP10NM60N *.

STP10NM60N Features

* With TO-220 package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP10NM60N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 10 5 A IDM Drain Current-Single Pulsed 32 A PD Total Dissipation @TC=25℃ 70

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Datasheet Details

Part number
STP10NM60N
Manufacturer
INCHANGE
File Size
252.26 KB
Datasheet
STP10NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STP10NM60N-like datasheet