STP180NS04ZC

N-channel Power MOSFET

STMicroelectronics

STP180NS04ZC Features

* TAB 3 2 1 TO-220 Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 mΩ 120 A

* Low capacitance and gate charge

* 100% avalanche tested

* 175 °C maximum junction temperature Applications

* Switching and linear applications Figure 1. Internal schematic

STP180NS04ZC General Description

This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout. The benefits of this technology, coupled with the extra clamping capabilities render this device particularly suitable for the harshest operating conditions, such as t.

STP180NS04ZC Datasheet (417.64 KB)