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STP180N4F6 N-channel Power MOSFET

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Description

STP180N4F6 N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

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Features

* Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

Applications

* Switching applications

STP180N4F6 Distributors

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STP180N4F6 N-channel Power MOSFET STMicroelectronics
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