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STP180N4F6 - N-channel Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	STP180N4F6
Manufacturer	STMicroelectronics ↗
File Size	557.23 KB
Description	N-channel Power MOSFET
Datasheet	STP180N4F6-STMicroelectronics.pdf

STP180N4F6 Product details

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

Features

Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.

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Published: Jan 21, 2019 |