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STP6NC80Z

N-CHANNEL Power MOSFET

STP6NC80Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP6NC80Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STP6NC80Z Datasheet (442.23 KB)

Preview of STP6NC80Z PDF

Datasheet Details

Part number:

STP6NC80Z

Manufacturer:

STMicroelectronics ↗

File Size:

442.23 KB

Description:

N-channel power mosfet.
STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP6NC80Z.

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STP6NC80Z N-CHANNEL Power MOSFET ST Microelectronics

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