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STP6NC80Z Datasheet - ST Microelectronics

Datasheet Details

Part number:

STP6NC80Z

Manufacturer:

STMicroelectronics ↗

File Size:

442.23 KB

Description:

N-CHANNEL Power MOSFET

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP6NC80Z_STMicroelectronics.pdf

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STP6NC80Z, N-CHANNEL Power MOSFET

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet

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